Appl Phys Lett 2000, 77:2885–2887.CrossRef 24. Calarco R, Meijers RJ, Debnath RK, Stoica T, Sutter E, Luth H: Nucleation and growth of GaN nanowires on Si (111) performed by molecular beam epitaxy. Nano Lett 2007, 7:2248–2251.CrossRef 25. Dogan P, Brandt O, Pfuller C, Lahneman J, Jahn V, Roder C, Trampert A, Geelhear L, Riechert H: Formation of high-quality GaN microcrystals by pendeoepitaxial overgrowth

Selleck SN-38 of GaN nanowires on Si (111) by molecular beam epitaxy. Cryst Growth Des 2011, 11:4257–4260.CrossRef 26. Brewster MM, Lu MY, Lim SK, Smith MJ, Zhou X, Gradecak S: The growth and optical properties of ZnO nanowalls. J Phys Chem Lett 2011, 2:1940–1945.CrossRef 27. Reshchikov MA, Morkoc H: Luminescence properties of defects in GaN. Appl Phys Lett 2005, 97:061301. Competing interests The authors declare that they have no competing interest. Authors’ contributions AZ carried out the MBE growth and characterization of GaN and drafted the manuscript. KH conceived the study and revised the manuscript. Both authors read and approved the final manuscript.”
“Background EPZ015938 in vivo Due to their exceptional properties, carbon nanotubes (CNT) have been the focus of intense

research in several fields from spintronics to biosensing [1, 2]. Moreover, recently, CNTs are being explored as active materials for the next generation of sensing devices, solar cells, field effect transistors

(FET), and nanoelectronics [3–6]. Pioneered by the work of Tans et al. [7], one of the promises of nanotechnology using carbon nanotubes concerns the development of faster, more power-efficient and smaller electronic devices [8]. However, Mirabegron the realization and mass production of CNT electronics have remained elusive so far. It is a complex situation since the large-scale integration of carbon nanotubes into current silicon technology is still under development. One of the main challenges concerns the selective deposition of carbon nanotubes on predefined positions of a circuit such as across a channel in a FET device. In this regard, dielectrophoresis offers a good advantage since it is possible to control the position and alignment of the CNTs along selleck chemical electrodes in an integrated circuit [9]. In addition, dielectrophoresis technology can be made compatible with mass-production processes while allowing deposition directly from CNTs dispersed in liquid [10, 11]. In this work, we undertake the study of semiconducting single-walled CNTs that have been aligned and deposited along two pre-structured palladium electrodes with a channel separation of 2 μm.