This may satisfy certain application requirements for topological

This may satisfy certain application requirements for topological heterostructures and graphene-related electronic devices. Acknowledgements This work was financially supported by projects from the Natural Science Foundation of China (Grant Nos. 11104303, 11274333, 11204339, 61136005, and 50902150), Chinese Academy of Sciences (Grant Nos. KGZD-EW-303, XDA02040000, and XDB04010500), the Open Foundation of State Key Laboratory of Functional Materials for Informatics (Grant No. SKL201309), the National High-tech R

& D Programme (Grant No. 2012AA7024034), VX-689 nmr and the National Science and Technology Major Projects of China (Grant No. 2011ZX02707). We thank the anonymous reviewers for their helpful suggestions which have improved the manuscript. References 1. Novoselov KS, Geim AK, Morozov SV, Jiang D, Zhang Y, Dubonos SV, Grigorieva IV, Firsov AA: Electric field effect in atomically thin carbon films. Science 2004, 306:666–669.AMN-107 mouse CrossRef 2. Novoselov KS, Jiang D, Schedin F, Booth TJ, Khotkevich VV, Morozov SV, Geim AK: Two-dimensional atomic

crystals. Proc Natl Acad Sci U S A 2005, 102:10451–10453.CrossRef 3. Wang L, Chen Z, Dean CR, Taniguchi T, Watanabe K, Brus LE, Hone J: Negligible environmental sensitivity of graphene in a hexagonal boron nitride/graphene/h-BN sandwich structure. ACS Nano 2012, 6:9314–9319.CrossRef 4. Han Q, Yan B, Gao T, Meng J, Zhang Y, Liu Z, Wu X, Yu D: Boron nitride film as a buffer layer in deposition of dielectrics on graphene. Small AZD1152 molecular weight 2014, 10:2293–2299.CrossRef 5. Watanabe K, Taniguchi T, Kanda H: Direct-bandgap Farnesyltransferase properties and evidence for ultraviolet lasing of hexagonal boron nitride single crystal. Nat Mater 2004, 3:404–409.CrossRef

6. Kubota Y, Watanabe K, Tsuda O, Taniguchi T: Deep ultraviolet light-emitting hexagonal boron nitride synthesized at atmospheric pressure. Science 2007, 317:932–934.CrossRef 7. Guo N, Wei J, Jia Y, Sun H, Wang Y, Zhao K, Shi X, Zhang L, Li X, Cao A, Hongwei Z, Kunlin W, Dehai W: Fabrication of large area hexagonal boron nitride thin films for bendable capacitors. Nano Res 2013, 6:602–610.CrossRef 8. Meng X-L, Lun N, Qi Y-X, Zhu H-L, Han F-D, Yin L-W, Fan R-H, Bai Y-J, Bi J-Q: Simple synthesis of mesoporous boron nitride with strong cathodoluminescence emission. J Solid State Chem 2011, 184:859–862.CrossRef 9. Kim KK, Hsu A, Jia X, Kim SM, Shi Y, Dresselhaus M, Palacios T, Kong J: Synthesis and characterization of hexagonal boron nitride film as a dielectric layer for graphene devices. ACS Nano 2012, 6:8583–8590.CrossRef 10. Sachdev H, Müller F, Hüfner S: BN analogues of graphene: on the formation mechanism of boronitrene layers – solids with extreme structural anisotropy. Diam Relat Mater 2010, 19:1027–1033.CrossRef 11. Gannett W, Regan W, Watanabe K, Taniguchi T, Crommie MF, Zettl A: Boron nitride substrates for high mobility chemical vapor deposited graphene. Appl Phys Lett 2011, 98:242105.CrossRef 12.

Comments are closed.