1.1.1.0/10/APIA/VIAA/145 and Latvian Council of Science MK-8931 according to the grant 10.0032.6.2. ED thanks for the support of this work by the European Social Fund within the project ‘Support for the implementation of doctoral studies at Riga Technical University’. RJ thanks the Research Council of Lithuania for Postdoctoral fellowship that was funded by the European Union Structural Funds project 4SC-202 ‘Postdoctoral Fellowship Implementation in Lithuania.’ References 1. Talochkin AB, Teys SA,
Suprun SP: Resonance Raman scattering by optical phonons in unstrained germanium quantum dots. Phys Rev 2005, 72:115416–11154.CrossRef 2. Wu XL, Gao T, Bao XM, Yan F, Jiang SS, Feng D: Annealing temperature dependence of Raman scattering in Ge+−implanted SiO2 films. J Appl Phys 1997, 82:2704.CrossRef 3. Hartmann JM, Bertin F, Rolland G, Semeria MN, Bremond G: Effects of the temperature and of the amount of Ge on the morphology of Ge islands grown by reduced pressure-chemical vapor deposition. Thin Sol APR-246 Film 2005, 479:113–120.CrossRef 4. Yoshida T, Yamada Y, Orii T: Electroluminescence of silicon nanocrystallites prepared by pulsed laser ablation in reduced pressure inert gas. J Appl Phys 1998,
83:5427–5432.CrossRef 5. Dumitras DC: Nd YAG Laser. Rijeka: InTech; 2012:318.CrossRef 6. Shah RR, Hollingsworth DR, DeJong GA, Crosthwait DL: P-N junction and Schottky barrier diode fabrication in laser recrystallized polysilicon on SiO 2 . Electron Device Lett, IEEE 1981, 2:159–161.CrossRef 7. Medvid A, Dmytruk I, Onufrijevs P, Pundyk I: Quantum confinement effect in nanohills formed on a surface of Ge by laser radiation. ID-8 Phys Status Solidi C 2007, 4:3066–3069.CrossRef 8.
Medvid A, Dmitruk I, Onufrijevs P, Pundyk I: Properties of nanostructure formed on SiO2/Si interface by laser radiation. Solid State Phenom 2008, 131–133:559–562.CrossRef 9. Medvid’ A, Onufrijevs P, Lyutovich K, Oehme M, Kasper E, Dmitruk N, Kondratenko O, Dmitruk I, Pundyk I: Self-assembly of nanohills in Si1 − x Ge x /Si hetero-epitaxial structure due to Ge redistribution induced by laser radiation. J Nanosci Nanotechnol 2010, 10:1094–1098.CrossRef 10. Medvid A, Mychko A, Pludons A, Naseka Y: Laser induced nanostructure formation on a surface of CdZnTe crystal. J Nano Res 2010, 11:107–112.CrossRef 11. Medvid’ A, Onufrijevs P, Dauksta E, Kyslyi V: “Black silicon” formation by Nd:YAG laser radiation. Adv Mater Res 2011, 222:44–47.CrossRef 12. Medvid’ A: Chapter 2. Laser induced self-assembly nanocones’ formation on a surface of semiconductors. In Laser Growth and Processing. Edited by: Vainos N. London: Woodhead; 2012:85–112. 13.